Formation of thin GaN layer on Si (111) for fabrication of high-temperature metal field effect transistors (MESFETs)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
3. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
4. High breakdown GaN HEMT with overlapping gate structure
5. Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature
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1. Intense laser field effects on the linear and nonlinear intersubband optical properties in a strained InGaN/GaN quantum well;Physica B: Condensed Matter;2014-11
2. Defects generation and annihilation in GaN grown on patterned silicon substrate;SPIE Proceedings;2013-03-27
3. A two-dimensional analytical model of subthreshold behavior to study the scaling capability of deep submicron double-gate GaN-MESFETs;Journal of Computational Electronics;2011-10-06
4. Modeling of GaN MESFETs at high temperature;2010 International Conference on Microelectronics;2010-12
5. Selective growth and impurity incorporation in semipolar GaN grown on Si substrate;SPIE Proceedings;2010-02-11
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