1.75μm emission from self-organized InAs quantum dots on GaAs-Reference-Cited by-同舟云学术

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1.75μm emission from self-organized InAs quantum dots on GaAs

Published:1999-05 Issue: Volume:201-202 Page:1143-1145
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ustinov V.M.,Egorov A.Yu.,Zhukov A.E.,Kovsh A.R.,Ledentsov N.N.,Maximov M.V.,Volovik B.V.,Tsatsul'nikov A.F.,Kop'ev P.S.,Alferov Zh.I.,Soshnikov I.P.,Zakharov N.,Werner P.,Bimberg D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference3 articles.

1. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs

2. Reliable InGaAs quantum well lasers at 1.1 μm

3. 1.3 μm room-temperature GaAs-based quantum-dot laser

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of self-assembled InAs quantum dots grown by various growth techniques;Journal of Crystal Growth;2004-01

2. InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxy;Journal of Crystal Growth;2003-04

3. Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers;Applied Physics Letters;2003-02-10

4. Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range.;MRS Proceedings;2001

5. MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM;IEE Proceedings - Optoelectronics;2000-06-01

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