Distribution of Te in GaSb grown by Bridgman technique under microgravity
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Crystal Growth and Steady‐State Segregation under Zero Gravity: InSb
2. Melt growth of striation and etch pit free GaSb under microgravity
3. Dopant Segregation in Earth- and Space-Grown InP Crystals
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1. Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments;npj Microgravity;2015-08-27
2. X-ray topography characterization of the structural response of Ge(Ga) crystals to variation in gravity force vector orientation during crystallization;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2009-02
3. Growth striations and dislocations in highly doped semiconductor single crystals;Journal of Crystal Growth;2008-12
4. Change of symmetry and rotation of thermal field as a new method of control of heat and mass transfer in crystal growth (by example of β-BaB2O4);Crystallography Reports;2005-01
5. New Developments in Vertical Gradient Freeze Growth;Advanced Engineering Materials;2004-07
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