Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Czochralski growth of bulk crystals of Ge1−xSix alloys
2. Czochralski growth of SitGe1-x single crystals
3. Single crystal growth of Si1 − Ge by the Czochralski technique
4. Bridgman and Czochralski growth of GeSi alloy crystals
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1. Concentration Profile of the Gallium and Antimony Impurities in the Ge1–x–Six〈Ga〉 and Ge1–x–Six〈Sb〉 Crystals Grown by the Hybrid Method;Inorganic Materials: Applied Research;2024-02
2. Disk-driven flows and interface shape in vertical Bridgman growth with a baffle;Progress in Crystal Growth and Characterization of Materials;2021-02
3. Three-Component Zone-Melting Method: Modeling of the Concentration-Component Distribution in Single Crystals of Ge–Si Solid Solutions;Semiconductors;2021-02
4. Preparation of a biomass adsorbent for gallium(III) based on corn stalk modified by iminodiacetic acid;Journal of the Taiwan Institute of Chemical Engineers;2018-10
5. Interface control by rotating submerged heater/baffle in vertical Bridgman configuration;Journal of Crystal Growth;2018-09
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