Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography-Reference-Cited by-同舟云学术

Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography

Published:2002-04 Issue:1-2 Volume:240 Page:22-33
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dudley M.,Vetter W.M.,Neudeck P.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Growth of step-free surfaces on device-size (0001)SiC mesas

2. White-beam synchrotron topographic analysis of multi-polytype SiC device configurations

3. W. Huang, S. Wang, M. Dudley, P. Neudeck, J.A. Powell, C. Fazi, Computer aided synchrotron white beam X-ray topographic analysis of multipolytype SiC device configurations, in: L. Terminello, N. Shinn, G. Ice, K. D’Amico, D. Perry (Eds.), Applications of Synchrotron Radiation Techniques to Materials Science, Mater. Res. Soc. Symp. Proc. 375 (1995) 327.

4. White-beam synchrotron topographic studies of defects in 6H-SiC single crystals

5. Synchrotron White Beam Topography Studies of Screw Dislocations in 6H-Sic Single Crystals

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