Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio-Reference-Cited by-同舟云学术

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Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

Published:2002-03 Issue:4 Volume:236 Page:529-537
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shin H.,Arkun E.,Thomson D.B.,Miraglia P.,Preble E.,Schlesser R.,Wolter S.,Sitar Z.,Davis R.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Nitrogen Compounds of Gallium. III

2. In situ optical monitoring of the decomposition of GaN thin films

3. In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface

4. Enhanced GaN decomposition in H2 near atmospheric pressures

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1. Reshaping of 3D GaN Structures during Annealing: Phenomenological Description and Mathematical Model;Crystal Growth & Design;2023-11-28

2. A study of thermal etching of GaN by atmospheric argon inductively coupled plasma;Thermochimica Acta;2023-06

3. Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures;Crystal Growth & Design;2022-12-22

4. Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate;Journal of Electronic Materials;2021-02-14

5. Improvement of Channel Mobility of GaN-MOSFETs With Thermal Treatment for Recess Surface;physica status solidi (a);2017-12-19

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