The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Oxygen precipitate precursors and low temperature gettering processes. I. Segregation of oxygen and thermal donor generation in the 600–850°C range
2. Oxygen precipitate precursors and low temperature gettering processes. II. DLTS analysis of deep levels associated to oxide precipitates
3. The effect of radiation damage on carrier mobility in neutron-transmutation-doped silicon
4. Influence of rapid thermal annealing and internal gettering on Czochralski‐grown silicon. I. Oxygen precipitation
5. Chapter 13 Intrinsic/Internal Gettering
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1. Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si;Chinese Physics B;2009-07
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4. Effect of high pressure annealing on electrical properties of nitrogen and germanium doped silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
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