The effect of radiation damage on carrier mobility in neutron-transmutation-doped silicon-Reference-Cited by-同舟云学术

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The effect of radiation damage on carrier mobility in neutron-transmutation-doped silicon

Published:1988-02-01 Issue:2 Volume:3 Page:77-83
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Maekawa T,Inoue S,Aiura M,Usami A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/3/i=2/a=002/pdf

Reference25 articles.

1. The effect of neutron irradiation on the lattice parameter and anomalous x‐ray transmission of silicon

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1. Complexes defects induced by neutron irradiation of Cz-silicon;Applied Physics A;2020-04-08

2. Properties of P-type porous silicon bombarded by neutrons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-04

3. Metal-semiconductor-metal ion-implanted Si waveguide photodetectors for C-band operation;Optics Express;2014-04-08

4. The effect of neutron irradiation defects on electrical resistivity in FZ-silicon samples irradiated at Es-Salam research reactor;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-09

5. The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon;Journal of Crystal Growth;2003-06

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