The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Published:2000-12 Issue:1-4 Volume:221 Page:730-733
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lambert D.J.H,Huang J.J,Shelton B.S,Wong M.M,Chowdhury U,Zhu T.G,Kwon H.K,Liliental-Weber Z,Benarama M,Feng M,Dupuis R.D

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. High performance AlGaN/GaN HEMT with improved Ohmic contacts

2. High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

3. Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs

4. AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

5. AlGaN/GaN heterojunction bipolar transistor

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-temperature (300 °C) operation ofnpn-type GaN/InGaN double heterojunction bipolar transistors;physica status solidi (c);2008-07

2. Temperature dependence of current-voltage characteristics of npn-type GaN∕InGaN double heterojunction bipolar transistors;Applied Physics Letters;2007-09-24

3. p-InGaN/n-GaN Vertical Conducting Diodes onn+-SiC Substrate for High Power Electronic Device Applications;Japanese Journal of Applied Physics;2006-04-25

4. Current-voltage characteristics of p‐InGaN∕n‐GaN vertical conducting diodes on n+‐SiC substrates;Applied Physics Letters;2005-12-05

5. ANALYSIS OF HIGH DC CURRENT GAIN STRUCTURES FOR GaN/InGaN/GaN HBTs;Selected Topics in Electronics and Systems;2005

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