The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
2. Intensity‐dependent energy and line shape variation of donor–acceptor‐pair bands in ZnSe:N at different compensation levels
3. Modified donor–acceptor pair luminescence in heavily nitrogen‐doped zinc selenide
4. Compensating defects in heavily nitrogen-doped zinc selenide: A photoluminescence study
5. Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, Optical, Dielectric and Electrical Properties of Al-Doped ZnSe Thin Films;Journal of Electronic Materials;2019-03-11
2. Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN;Journal of Applied Physics;2002
3. Influence of electron-phonon interaction on the optical properties of III nitride semiconductors;Journal of Physics: Condensed Matter;2001-07-26
4. ZnSe: donor-acceptor pairs;New Data and Updates for II-VI Compounds
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