Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN-Reference-Cited by-同舟云学术

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Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

Published:2002 Issue:12 Volume:91 Page:9827
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Germain M.,Kartheuser E.,Gurskii A. L.,Lutsenko E. V.,Marko I. P.,Pavlovskii V. N.,Yablonskii G. P.,Heime K.,Heuken M.,Schineller B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference42 articles.

1. Origin of defect-related photoluminescence bands in doped and nominally undoped GaN

2. Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

3. Temperature quenching of photoluminescence intensities in undoped and doped GaN

4. Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride

5. Photoluminescence of Nitrogen-Doped ZnSe Layers

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