Numerical study on the effect of operating parameters on point defects in a silicon crystal during Czochralski growth I. Rotation effect
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Czochralski Silicon Crystals Grown in a Transverse Magnetic Field
2. Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
3. Effect of a shaped magnetic field on Czochralski silicon growth
4. Silicon crystal growth in a cusp magnetic field
5. Oxygen transport in magnetic czochralski growth of silicon with a non-uniform magnetic field
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1. Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth;Materials Science in Semiconductor Processing;2021-06
2. Numerical optimization of czochralski sapphire single crystal growth using orthogonal design method;Crystal Research and Technology;2014-03-27
3. Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals;Rare Metals;2007-12
4. Spin-up from rest in a cylinder of an electrically conducting fluid in an axial magnetic field;Acta Mechanica;2006-08-08
5. The effects of several growth parameters on the formation behavior of point defects in Czochralski-grown silicon crystals;Journal of Crystal Growth;2006-07
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