Impurity incorporation of unintentionally doped AlxGa1−xAs during MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Detailed models of the MOVPE process
2. Gas‐Phase and Surface Reaction Mechanisms in MOCVD of GaAs with Trimethyl‐Gallium and Arsine
3. Simulation of carbon doping of GaAs during MOVPE
4. Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
5. Carbon doping in metalorganic vapor phase epitaxy
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2. Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions;Journal of Crystal Growth;2013-07
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4. Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots;Journal of Crystal Growth;2011-01
5. Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1−xAs;Journal of Crystal Growth;2005-10
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