Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions-Reference-Cited by-同舟云学术

Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

Published:2000-05 Issue:1-2 Volume:213 Page:40-50
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hayakawa Y,Okano Y,Hirata A,Imaishi N,Kumagiri Y,Zhong X,Xie X,Yuan B,Wu F,Liu H,Yamaguchi T,Kumagawa M

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Crystal Growth and Segregation under Zero Gravity: Ge

2. Growth kinetics in space- and earth-grown InP and GaSb crystals

3. Melt growth of striation and etch pit free GaSb under microgravity

4. Striation-free silicon crystals by float-zoning with surface-coated melt

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