Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
4. Preparation of AlxGa1-xN/GaN heterostructure by MOVPE
5. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition;Journal of Physics D: Applied Physics;2010-04-21
2. AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas;Journal of Crystal Growth;2008-11
3. In Co-Doping Effect on the Optical Properties of P-Type GaN Epilayers;Korean Journal of Materials Research;2008-08-31
4. Metal organic vapour phase epitaxy of GaN and lateral overgrowth;Reports on Progress in Physics;2004-04-07
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