Development of dislocation density analysis code for annealing process of single-crystal ingot-Reference-Cited by-同舟云学术

Development of dislocation density analysis code for annealing process of single-crystal ingot

Published:2000-06 Issue:1-4 Volume:216 Page:6-14
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Miyazaki N,Yamamoto S,Kutsukake H

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. S. Sawada, K. Hashio, M. Tatsumi, K. Fujita, M. Shiozaki, H. Miyazima, R. Nakai, Y. Nishida, Sumitomo Electric Technical Review, No. 149, 1996, p. 108.

2. Zur plastischen Verformung von Germanium und InSb

3. Development of finite element computer program for dislocation density analysis of bulk semiconductor single crystals during Czochralski growth

4. Dislocation Density Analyses of Bulk Semiconductor Single Crystal during CZ Growth Process. Effects of Crystal Anisotropy.

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