Modelling dislocation generation in high pressure Czochralski growth of InP single crystals: part I. Construction of a visco-plastic deformation model-Reference-Cited by-同舟云学术

Modelling dislocation generation in high pressure Czochralski growth of InP single crystals: part I. Construction of a visco-plastic deformation model

Published:2005-02-08 Issue:2 Volume:13 Page:249-266
ISSN:0965-0393
Container-title:Modelling and Simulation in Materials Science and Engineering
language:
Short-container-title:Modelling Simul. Mater. Sci. Eng.

Author:

Pendurti S,Prasad V,Zhang H

Publisher

IOP Publishing

Subject

Computer Science Applications,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modelling and Simulation

Reference58 articles.

1. Defects in semiconductors and their effects on devices

2. On dislocation generation in semiconductor crystals

3. A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals

4. A thermoelastic analysis of the thermal stress produced in a semi-infinite cylindrical single crystal during the Czochralski growth

5. Temperature profile and thermal stress calculations in GaAs crystals growing from the melt

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