Growth temperature and phosphorus vapor pressure dependencies of Si incorporation into InP crystals in solution growth process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference40 articles.
1. Proc. North American Session of 6th Intern. Symp. on GaAs and Related Compounds;Antypas,1977
2. Preparation of high‐purity InP by the synthesis, solute diffusion technique
3. Reactions of Gallium with Quartz and with Water Vapor, with Implications in the Synthesis of Gallium Arsenide
4. Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth
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1. Growth of Semiconductor Materials;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07
2. Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals;Defect and Diffusion Forum;2001-11
3. Reversible variation of donor concentrations in high-purity InP by thermal treatment;Journal of Applied Physics;2000-03-15
4. High Purity Liquid Phase Epitaxial Growth of InP;Japanese Journal of Applied Physics;1993-11-15
5. InP single crystal growth with controlled supercooling during the early stage by a modified LEC method;Journal of Crystal Growth;1991-08
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