Preparation of high‐purity InP by the synthesis, solute diffusion technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329040
Reference23 articles.
1. n-channel formation on semi-insulating InP surface by m.i.s.f.e.t.
2. Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver
3. Eutectic formation in chromium-doped indium phosphide
4. Precipitates in Fe-doped InP
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