Transient temperature phenomena during sublimation growth of silicon carbide single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
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4. A.O. Konstantinov, Sublimation growth of SiC, in: G.L. Harris (Ed.), Properties of Silicon Carbide, EMIS Datareview Series, No. 13, Institution of Electrical Engineers, INSPEC, London, 1995 p. 170.
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