A Transfer Learning‐Based Method for Facilitating the Prediction of Unsteady Crystal Growth-Reference-Cited by-同舟云学术

A Transfer Learning‐Based Method for Facilitating the Prediction of Unsteady Crystal Growth

Published:2022-07-03 Issue:9 Volume:5 Page:2200204
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Advcd Theory and Sims

Author:

Dang Yifan¹,Kutsukake Kentaro²³,Liu Xin²,Inoue Yoshiki¹,Liu Xinbo¹,Seki Shota¹,Zhu Can²,Harada Shunta¹²,Tagawa Miho¹²,Ujihara Toru¹²⁴

Affiliation:

1. Graduate School of Engineering Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan

2. Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan

3. Center for Advanced Intelligence Project RIKEN Nihonbashi Chuo‐ku Tokyo 103‐0027 Japan

4. GaN Advanced Device Open Innovation Laboratory (GaN‐OIL) National Institute of Advanced Industrial Science and Technology (AIST) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8601 Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.202200204

Reference39 articles.

1. Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High-Performance UV Photodetectors

2. Numerical investigation of the effect of shape change in graphite crucible during top-seeded solution growth of SiC

3. Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth

4. Application of Artificial Neural Networks in Crystal Growth of Electronic and Opto-Electronic Materials

5. Experimental and numerical study of the VGF growth of CdTe crystal

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