Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3μm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
2. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
3. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
4. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
5. High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers
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