Influence of potential well thickness on the carrier transport characteristics of InGaAs quantum dot laser diodes

Author:

Dong Hailiang12ORCID,Jia Zhigang12ORCID,Jia Wei12,Liang Jian3,Wang Zhiyong4,Xua Bingshe125

Affiliation:

1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi, 030024, P. R. China

2. Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi, 030024, P. R. China

3. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, 030024, P. R. China

4. Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, P. R. China

5. Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi, 710021, P. R. China

Abstract

The characteristics of InGaAs quantum dot laser diodes have been investigated by inserting InGaAs wells of different thicknesses in the active zone.

Funder

National Natural Science Foundation of China

Fund for Shanxi Key Subjects Construction

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

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