Analysis of magnetic field effect on 3D melt flow in CZ Si growth-Reference-Cited by-同舟云学术

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Analysis of magnetic field effect on 3D melt flow in CZ Si growth

Published:2003-03 Issue:1-2 Volume:250 Page:183-188
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ivanov N.G.,Korsakov A.B.,Smirnov E.M.,Khodosevitch K.V.,Kalaev V.V.,Makarov Yu.N.,Dornberger E.,Virbulis J.,von Ammon W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

2. Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fields

3. Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth

4. Melt motion in a Czochralski crystal puller with an axial magnetic field: isothermal motion

5. Strategies for turbulence modelling and simulations

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1. Extended Hypothesis for Reynolds Stress Tensor and Turbulent Heat Flux Modeling Within a Novel K‐ε Model for Prediction of Crystal Growth from the Melt;Crystal Research and Technology;2023-11-23

2. Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field;Crystal Growth & Design;2023-05-08

3. A modified hypothesis of Reynolds stress tensor modeling for mixed turbulent convection in crystal growth;Journal of Crystal Growth;2022-02

4. Optimal Magnetic Graphite Heater Design for Impurity Control in Single-Crystal Si Grower Using Crystal Growth Simulation;Processes;2021-12-30

5. ILES of melt turbulent convection with conjugated heat transfer in the crucible and gas flow for Czochralski silicon crystal growth system;Journal of Crystal Growth;2021-11

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