Atomic layer epitaxy of ZnTe by isothermal closed space sublimation-Reference-Cited by-同舟云学术

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Atomic layer epitaxy of ZnTe by isothermal closed space sublimation

Published:2001-03 Issue:4 Volume:223 Page:447-449
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Larramendi E.M.,Purón E.,Hernández L.C.,Sánchez M.,De Roux S.,de Melo O.,Romero-Paredes G.,Peña-Sierra R.,Tamura M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth

2. Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy

3. X‐ray [440] diffraction of the strained‐layer superlattices grown on (001) substrates

4. Structural and optical properties in ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor transport deposition

5. Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe‐ZnTe strained‐layer superlattices

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1. Forming a thick CdZnTe epitaxial film by sublimating closely spaced;J CERAM PROCESS RES;2023

2. Fabrication and characterization of Zinc Telluride (ZnTe) thin films grown on glass substrates;Physica B: Condensed Matter;2019-05

3. Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates;Materials Research;2017-03-23

4. Structural and optical properties of copper enriched ZnSe thin films prepared by closed space sublimation technique;Materials Science in Semiconductor Processing;2013-12

5. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

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