Structural and optical properties in ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor transport deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356526
Reference17 articles.
1. Summary Abstract: Low-temperature electrical transport studies of the two-dimensional electron gas at p-InSb interfaces
2. Growth of CdTe epitaxial films onp‐InSb(111) by temperature gradient vapor transport deposition
3. Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition
4. Properties of CdTe/InSb heterostructures grown by temperature gradient vapor transport deposition
5. Study of the initial stages of growth of CdTe on (001)GaAs
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1. Responsivity properties of ZnTe/GaAs heterostructures formed with pulsed-laser deposition;Solar Energy Materials and Solar Cells;2009-01
2. Responsivity of ZnTe∕n-GaAs heterostructures formed by infrared nanosecond laser deposition;Journal of Applied Physics;2007-10
3. Photoluminescence of ZnTe and ZnTe:Cr grown by molecular-beam epitaxy;Journal of Applied Physics;2005-01
4. The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures;Journal of Physics and Chemistry of Solids;2003-02
5. Atomic layer epitaxy of ZnTe by isothermal closed space sublimation;Journal of Crystal Growth;2001-03
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