Study of defects and interfaces in epitaxial ZnO films on (112̄0) Al2O3 grown by electron cyclotron resonance-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Will UV Lasers Beat the Blues?
2. New Source of Dislocations inGexSi1−x/Si(100)Strained Epitaxial Layers
3. HRTEM study of a Cu/Al2O3interface
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5. Epitaxial Growth of ZnO Films on (0001) Sapphire at Low Temperatures by Electron Cyclotron Resonance-assisted Molecular Beam Epitaxy and Their Microstructural Characterizations
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