Modeling of point defect behavior by the stress due to impurity doping in growing silicon-Reference-Cited by-同舟云学术

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Modeling of point defect behavior by the stress due to impurity doping in growing silicon

Published:2001-05 Issue:2-4 Volume:225 Page:294-298
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tanahashi K.,Harada H.,Koukitsu A.,Inoue N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

2. T. Abe, Silicon, Baifukan, Tokyo, 1994, 263 (in Japanese).

3. M. Kikuchi, K. Tanahashi, N. Inoue, Deffects in Silicon III, The Electrochemical Society, Pennington, NJ, 1999, p. 491.

4. T. Ono, H. Horie, M. Miyazaki, H. Tsuya, G.A. Rozgonyi, Defects in Silicon III, The Electrochemical Society, Pennington, NJ, 1999, p. 300.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot;Journal of Crystal Growth;2017-01

2. Impact of germanium co-doping on oxygen precipitation in heavily boron-doped Czochralski silicon;Superlattices and Microstructures;2016-11

3. Review—Properties of Intrinsic Point Defects in Si and Ge Assessed by Density Functional Theory;ECS Journal of Solid State Science and Technology;2016

4. Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon;physica status solidi (b);2014-09-25

5. Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt;Journal of Applied Physics;2013-10-21

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