Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1−xAs and InxGa1−xAs buffer layers on GaAs substrates-Reference-Cited by-同舟云学术

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Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1−xAs and InxGa1−xAs buffer layers on GaAs substrates

Published:2001-07 Issue: Volume:227-228 Page:639-644
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Méndez-Garcı́a V.H,López-López M,Lastras-Martı́nez A,Vidal M.A,Luyo-Alvarado J,Meléndez-Lira M,Momose K,Yonezu H

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. S. Itoh, A. Ishibashi, J. Crystal Growth 150 (1995) 701, and references therein.

2. Dependence of defect generation and structure on interface chemistry in ZnSe/GaAs

3. Hillocks formation during the molecular beam epitaxial growth of ZnSe on GaAs substrates

4. Structural properties of heterostructures with engineered band offsets

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source;Semiconductors;2009-11

2. Non-linear emissions of MOVPE ZnSe epilayers;Materials Science and Engineering: B;2006-07

3. Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: strain, relaxation and lattice parameter;Journal of Physics D: Applied Physics;2002-06-06

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