Hillocks formation during the molecular beam epitaxial growth of ZnSe on GaAs substrates-Reference-Cited by-同舟云学术

Hillocks formation during the molecular beam epitaxial growth of ZnSe on GaAs substrates

Published:1998-10 Issue:4 Volume:193 Page:528-534
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

López-López M.,Guillén-Cervantes A.,Rivera-Alvarez Z.,Hernández-Calderón I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. See for example, T.B. Ng, C.C. Chu, J. Han, G.C. Hua, R.L. Gunshor, E. Ho, E.L. Warlick, L.A. Kolodziejski, A.V. Nurmiko, J. Crsytal Growth 175 (1997) 556, and references therein.

2. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

3. VAPOR‐LIQUID‐SOLID GROWTH OF GALLIUM PHOSPHIDE

4. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers

5. Large scale surface structure formed during GaAs (001) homoepitaxy

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