Characterization of self-organized GaP/InP quantum dots with scanning tunneling spectroscopy and time-resolved PL spectroscopy-Reference-Cited by-同舟云学术

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Characterization of self-organized GaP/InP quantum dots with scanning tunneling spectroscopy and time-resolved PL spectroscopy

Published:2001-07 Issue: Volume:227-228 Page:1095-1099
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mori J,Asahi H,Noh J.H,Fudeta M,Watanabe D,Matsuda S,Asami K,Seki S,Matsui Y,Tagawa S,Gonda S

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference3 articles.

1. Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in(GaP)n(InP)nSuperlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy

2. Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices

3. Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition;Applied Physics Letters;2015-01-05

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