Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices-Reference-Cited by-同舟云学术

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Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices

Published:1997-06-30 Issue:Part 1, No. 6B Volume:36 Page:3818-3820
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Noh Joo-Hyong,Asahi Hajime,Kim Seong-Jin,Gonda Shun-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAs nanostructures on polar GaAs surfaces;International Journal of Nanotechnology;2009

2. Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires;Nanotechnology;2006-02-02

3. Wavelength control of 1.3–1.6 μm light emission from the quantum dots self-formed in GaAs∕InAs short-period superlattices grown on InP (411)A substrates;Journal of Applied Physics;2004-08

4. Characterization of self-organized GaP/InP quantum dots with scanning tunneling spectroscopy and time-resolved PL spectroscopy;Journal of Crystal Growth;2001-07

5. Theory of the electronic structure of GaN/AlN hexagonal quantum dots;Physical Review B;2000-12-15

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