MOVPE growth of ZnSxSe1−x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors-Reference-Cited by-同舟云学术

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MOVPE growth of ZnSxSe1−x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors

Published:1998-02 Issue: Volume:184-185 Page:149-152
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thiandoume C.,Ka O.,Lusson A.,Cohen C.,Bouanani A.,Rommeluere M.,Tromson-Carli A.,Gorochov O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Interface Stress at OMVPE-Grown ZnSxSe1-x/GaAs:Cr Heterostructure

2. OMVPE of Zn-based II–IV semiconductors using methylmercaptan as a novel sulfur source

3. MOVPE of ZnSE and Zn(S,Se) for Blue LEDs

4. Low temperature growth of ZnSxSe1−xalloys fabricated by hydrogen radical enhanced chemical vapor deposition in an atomic layer epitaxy mode

5. Low-Pressure Metal-Organic-Vapor-Phase-Epitaxy (MOVPE) of ZnSSe with Different Precursors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and optical properties of ZnS0.05Se0.95 nanocrystalline thin films;Journal of Applied Physics;2001-12

2. Synthesis of ZnSxSe1-x(0;Journal of Physics D: Applied Physics;2001-02-08

3. The thermal chemistry of model organosulfur compounds on gallium arsenide (110);Surface Science;2000-05

4. MOVPE growth of ZnS on (100)GaAs using dimethylzinc and ditertiarybutyl sulphide precursors;Journal of Crystal Growth;1999-03

5. Substrate/layer relationships in II–VIs;Journal of Crystal Growth;1999-02

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