Low temperature growth of ZnSxSe1−xalloys fabricated by hydrogen radical enhanced chemical vapor deposition in an atomic layer epitaxy mode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354207
Reference19 articles.
1. Optical properties and device prospects of ZnSe-based quantum structures
2. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
3. A review of the bulk growth of high band gap II–VI compounds
4. Structural properties of the ZnSe/GaAs system grown by molecular‐beam epitaxy
5. Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
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1. The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth;Journal of the American Chemical Society;2010-05-14
2. Monolithic integration of a ZnS MSM photodiode and an InGaP/GaAs HBT on a GaAs substrate;Semiconductor Science and Technology;2009-03-06
3. Remote hydrogen plasma chemical vapor deposition of silicon-carbon thin-film materials from a hexamethyldisilane source: Characterization of the process and the deposits;Journal of Applied Polymer Science;2002-08-28
4. Oligomerization and Polymerization Steps in Remote Plasma Chemical Vapor Deposition of Silicon−Carbon and Silica Films from Organosilicon Sources;Chemistry of Materials;2001-05-01
5. MOVPE growth of ZnSxSe1−x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors;Journal of Crystal Growth;1998-02
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