Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe-Reference-Cited by-同舟云学术

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Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe

Published:1997-04 Issue:1-4 Volume:174 Page:757-762
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gurskii A.L.,Marko I.P.,Yuvchenko V.N.,Yablonskii G.P.,Hamadeh H.,Taudt W.,Söllner J.,Kalisch H.,Heuken M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Blue Light Emitting Diode

2. MOVPE of ZnSE and Zn(S,Se) for Blue LEDs

3. Proc. Int. Symp. on Blue Laser and Light Emitting Diodes;Gurskii,1996

4. Metalorganic vapor phase epitaxy of wide-gap II–VI semiconductors for optoelectronic applications: current status and future trends

5. Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic ellipsometry (SE) studies on vacuum-evaporated ZnSe thin films;Materials Characterization;2007-08

2. The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe;Journal of Crystal Growth;2000-06

3. Nature of the impurity bands of the edge luminescence of highly doped compensated ZnSe:N;Journal of Applied Spectroscopy;2000-01

4. Effect of delocalization of the donor states on the donor–acceptor recombination in zinc selenide;Journal of Luminescence;1999-08

5. Zinc selenide (ZnSe) shallow donors, ionization energies;II-VI and I-VII Compounds; Semimagnetic Compounds

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