Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection-Reference-Cited by-同舟云学术

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Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection

Published:1997-10 Issue:3-4 Volume:180 Page:450-460
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Assaker R.,van den Bogaert N.,Dupret F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Crystal Pulling from the Melt;Hurle,1993

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