Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(001) substrates by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(001) substrates by metalorganic vapor phase epitaxy

Published:1998-12 Issue:1-4 Volume:195 Page:323-327
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yaguchi Hiroyuki,Wu Jun,Zhang Baoping,Segawa Yusaburo,Nagasawa Hiroyuki,Onabe Kentaro,Shiraki Yasuhiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Optical band gap of indium nitride

2. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

3. The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process

4. Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

5. Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy

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1. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN;ACS Applied Materials & Interfaces;2023-08-02

2. Cubic GaN and InGaN/GaN quantum wells;Applied Physics Reviews;2022-12

3. Surface acoustic wave velocity and elastic constants of cubic GaN;Applied Physics Express;2016-05-06

4. Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core–Shell Heterostructures;Nano Letters;2015-11-05

5. Optical properties of cubic GaN from 1 to 20 eV;Physical Review B;2012-04-26

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