Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN-Reference-Cited by-同舟云学术

Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN

Published:1998-06 Issue: Volume:189-190 Page:335-339
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schön O,Schineller B,Heuken M,Beccard R

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. J.L. Rouvière, M. Arlery, R. Niebuhr, K.H. Bachem, O. Briot, MRS Int. J. Nitride Semiconductor Res., 1, Article 33 (1996).

2. S. Hasenöhrl, H. Hardtdegen, Ch. Ungermanns, EW-MOVPE VI, D12, Gent, Belgium, June 1995.

3. B. Schineller, A. Guttzeit, O. Schön, M. Heuken, K. Heime, R. Beccard, in: Proc. ICSC III-N, Stockholm, Sweden, 1997, to be published.

4. E. Woelk, G. Strauch, D. Schmitz, H. Jürgensen, in: Proc. Int. Symp. on Blue Laser and Ligh Emitting Diodes, Chiba Univ., Japan, 1996, pp. 514–517.

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