Molecular beam epitaxial growth of high quality Pb1−xSnxTe layers with 0⩽x⩽1-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth of high quality Pb1−xSnxTe layers with 0⩽x⩽1

Published:1998-07 Issue:3 Volume:191 Page:466-471
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Rappl P.H.O.,Closs H.,Ferreira S.O.,Abramof E.,Boschetti C.,Motisuke P.,Ueta A.Y.,Bandeira I.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Band Structure and Laser Action inPbxSn1−xTe

2. Recent advances in lead-chalcogenide diode lasers

3. MBE techniques for IV–VI optoelectronic devices

4. Fundamental Absorption Edge of Tin Telluride

5. Burstein shift of the fundamental absorption edge of tin telluride

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1. Negative and persistent photoconductivity in Bi-doped Pb0.5Sn0.5Te epitaxial films;Optical Materials;2024-09

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3. Thickness-Dependent Terahertz Permittivity of Epitaxially Grown PbTe Thin Films;Coatings;2023-10-28

4. Modification of the Surface of Lead-Tin Telluride Films by Low-Energy Argon Ions;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-10

5. Influence of ion-plasma treatment on the surface morphology of epitaxial lead-tin telluride films;Journal of Physics: Conference Series;2022-05-01

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