Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
2. Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions
3. The metalorganic chemical vapor deposition growth of AlAsSb and InAsSb/lnAs using novel source materials for Infrared Emitters
4. Quantum Cascade Laser
5. Infrared laser based on intersubband transitions in quantum wells
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1. Growth and characterization of InAsP/InAsSb superlattices by Metal Organic Chemical Vapor Deposition for mid-wavelength detection;J INFRARED MILLIM W;2022
2. Effects of In composition on the surface morphology of self-assembled In x Ga1−x Sb/GaAs quantum dots;Japanese Journal of Applied Physics;2022-05-25
3. Enhanced room temperature infrared LEDs using monolithically integrated plasmonic materials;Optica;2020-10-08
4. Ab-initio study of ordered III–V antimony-based semiconductor alloys $$\mathbf{GaP }_{1-x}{} \mathbf{Sb} _{x} \mathbf{and} AlP _{1-x}{} \mathbf{Sb} _{x}$$;Pramana;2020-07-16
5. Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots;Applied Physics Letters;2020-02-10
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