Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes
2. Erbium Doped Silicon for Light Emitting Devices
3. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
4. Growth of erbium-doped GaAs and InP by metalorganic chemical vapor deposition using Er(CH3C5H4)3 and Er(C5H5)3
5. The growth of Magnesium-doped GaAs by the Om-Vpe process
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2. The Synthesis, Structures and Polymorphism of the Dimeric Trivalent Rare‐Earth 3,5‐Dimethylpyrazolate Complexes [Ln(Me 2 pz) 3 (thf)] 2;European Journal of Inorganic Chemistry;2014-04-04
3. Trivalent Rare Earth Complexes of the Unsymmetrical 3‐(2′‐Thienyl)‐5‐(trifluoromethyl)pyrazolate Ligand;European Journal of Inorganic Chemistry;2011-07-19
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