The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures-Reference-Cited by-同舟云学术

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The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures

Published:1998-06 Issue: Volume:189-190 Page:648-651
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Wei,Leong Teo Kie,Fu Li Ming,Jin Chua Soo,Uchida Kazuo,Tokunaga Hiroki,Akutsu Nakao,Matsumoto Koh

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

3. GaN, AlN, and InN: A review

4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

5. Emerging gallium nitride based devices

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wurtzite nanostructured piezoelectric devices;Materials Today Sustainability;2023-09

2. Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes;Chinese Physics Letters;2016-11

3. Modulation Spectroscopy;Encyclopedia of Materials: Science and Technology;2001

4. Absorption Spectroscopy and Band Structure in Polarized GaN/AlxGa1?xN Quantum Wells;physica status solidi (a);2001-01

5. An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN;Applied Physics Letters;2000-02-21

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