Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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2. Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications;Journal of Physics D: Applied Physics;2021-01-22
3. Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time;Materials Research Express;2019-12-09
4. Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy;Nanoscale;2018
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