GaN growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
3. Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy
4. Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
5. Vapor phase epitaxy of GaN usingGaCl3N2 andNH3N2
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1. Identification of 6H-SiC polar faces with pull-off force of atomic force microscopy;Applied Surface Science;2016-12
2. Epitaxial gallium nitride thin films grown on silicon substrates utilizing gallium nitride seed-layer formed by liquid source precursor;Korean Journal of Chemical Engineering;2011-10-12
3. Growth of Bulk GaN Crystals;Comprehensive Semiconductor Science and Technology;2011
4. MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices;Journal of Crystal Growth;2009-05
5. Growth of group III nitride films by pulsed electron beam deposition;Journal of Solid State Chemistry;2009-05
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