Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. New substrates for HTSC microwave devices
2. Thermal expansion of LaAlO3 and (La,Sr)(Al,Ta)O3, substrate materials for superconducting thin-film device applications
3. Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals as substrates for GaN epitaxial growth
4. Growth of epitaxial AlxGa1−xN films by pulsed laser deposition
5. Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition
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1. In-situ and post deposition analysis of laser MBE deposited GaN films at varying nitrogen gas flow;Vacuum;2019-06
2. Optical band gap and infrared phonon modes of (La_029Sr_071)(Al_065Ta_036)O_3 (LSAT) single crystal from infrared to ultraviolet range spectroscopic ellipsometry;Optical Materials Express;2016-09-22
3. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08
4. Quality-enhanced GaN epitaxial films grown on (La, Sr) (Al, Ta)O3 substrates by pulsed laser deposition;Materials Letters;2016-04
5. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices;Surface Science Reports;2015-11
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