Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Growth of Ga1- xB xN by Molecular Beam Epitaxy
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2. Review—Review of Research on AlGaN MOCVD Growth;ECS Journal of Solid State Science and Technology;2020-01-22
3. First principle calculations study of AlN surface terminal structure evolution under different conditions;Surface and Interface Analysis;2019-12-16
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