Chapter 14 Applications of LEDs and LDs
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Elsevier
Reference45 articles.
1. Optically pumped GaN/Al0.1Ga0.9N double‐heterostructure ultraviolet laser
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
4. Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure
5. Hydrogenation ofp‐type gallium nitride
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Magnetoelectronic properties of GaN codoped with (V, Mn) impurities for spintronic devices: Ab-initio and Monte Carlo studies;Physica A: Statistical Mechanics and its Applications;2018-12
2. Improved quality of plasma assisted MBE‐grown GaN/AlGaN quantum wells revealed by two‐wavelength excited photoluminescence;physica status solidi (c);2003-11-24
3. InGaN∕GaN multi-quantum well distributed Bragg reflector laser diode with second-order gratings;Electronics Letters;2003
4. Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire;Journal of Crystal Growth;2001-06
5. Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy;MRS Internet Journal of Nitride Semiconductor Research;2000
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