Enhanced two-dimensional growth of MOVPE InN films on sapphire (0001) substrates-Reference-Cited by-同舟云学术

Enhanced two-dimensional growth of MOVPE InN films on sapphire (0001) substrates

Published:2001-09 Issue:3-4 Volume:230 Page:351-356
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yamamoto Akio,Adachi Masato,Hashimoto Akihiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Novel metalorganic chemical vapor deposition system for GaN growth

2. MOVPE of GaN using a specially designed two-flow horizontal reactor

3. The improvement of GaN epitaxial layer quality by the design of reactor chamber spacing

4. A comparative study of OMVPE-grown InN heteroepitaxial layers on GaAs(1 1 1)B and α-Al2O3(0 0 0 1) substrates

5. M. Adachi, Y. Murakami, A. Hashimoto, A. Yamamoto, International Workshop on Nitride Semiconductors, IWN 2000, Nagoya, September 24–27, 2000, PMD-06.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission;Semiconductor Science and Technology;2015-03-05

2. Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors;Japanese Journal of Applied Physics;2013-11-01

3. Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD;Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting;2012-10-15

4. MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain;Thin Solid Films;2010-09

5. Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source;Journal of Crystal Growth;2010-06