Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Modeling of silicon carbide chemical vapor deposition in a vertical reactor
2. Modeling of Silicon Carbide Epitaxial Growth in Hot-Wall Chemical Vapor Deposition Processes
3. Numerical simulation of silicon carbide chemical vapor deposition
4. Simulation of Chemical Vapour Deposition of SiC from Methyltrichlorosilane in a Hot Wall Reactor
5. Growth of SiC by ?Hot-Wall? CVD and HTCVD
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1. Design, development, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC;Review of Scientific Instruments;2024-06-01
2. Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer;Journal of Manufacturing Science and Engineering;2024-04-22
3. Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating;2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2023-04-17
4. Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor;Materials;2021-12-08
5. 3D Modeling and optimization of SiC deposition from CH3SiCl3/H2 in a commercial hot wall reactor;Journal of Crystal Growth;2021-01
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