Modeling of silicon carbide chemical vapor deposition in a vertical reactor-Reference-Cited by-同舟云学术

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Modeling of silicon carbide chemical vapor deposition in a vertical reactor

Published:1999-07 Issue: Volume:61-62 Page:172-175
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Vorob’ev A.N.,Egorov Yu.E.,Makarov Yu.N.,Zhmakin A.I.,Galyukov A.O.,Rupp R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

2. Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation

3. Condensation of water vapour during supersonic expansion in nozzles

4. Kinetische Behandlung der Keimbildung in übersättigten Dämpfen

5. Thermophoretic Deposition of Small Particles in the Modified Chemical Vapor Deposition (MCVD) Process

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1. Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor;Materials;2021-12-08

2. SiC coating on HTR graphite spheres prepared by fluidized-bed chemical vapor deposition;Annals of Nuclear Energy;2019-12

3. Structural study of β-SiC(001) films on Si(001) by laser chemical vapor deposition;Journal of the American Ceramic Society;2017-01-04

4. Assessment of gas flow characteristics and reaction kinetics of chemical vapour deposition reactors for the production of nano-hybrid fibres;Asia-Pacific Journal of Chemical Engineering;2013-01-14

5. Finite element simulation of the effects of process parameters on deposition uniformity of chemical-vapor-deposited silicon carbide;Computational Materials Science;2009-10

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